DMN10H099SFG Datasheet. Equivalente

 ..1. Size:259K  diodes
 dmn10h099sfg.pdf

DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C density end products 80m @ VGS = 10V 4.2A Occupies just 33% of the board area occupied by SO-8 enabling

 4.1. Size:351K  diodes
 dmn10h099sk3.pdf

DMN10H099SK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(on) max Small form factor thermally efficient package enables higher TC = +25 C 80m @ VGS = 10V 17A density end products 100V 99m @ VGS = 6V 15A Lead-Free Finish; RoHS compliant (Note 1 & 2) Haloge

 4.2. Size:266K  inchange semiconductor
 dmn10h099sk3.pdf

isc N-Channel MOSFET Transistor DMN10H099SK3 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 8.1. Size:418K  diodes
 dmn10h120se.pdf

DMN10H120SE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 110m @ VGS = 10V 3.6A Fast Switching Speed 100V 122m @ VGS = 6.0V 3.4A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free

 8.2. Size:487K  diodes
 dmn10h100sk3.pdf

DMN10H100SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C 80m @ VGS = 10V 18A density end products 100V 16A 100m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

 8.3. Size:401K  diodes
 dmn10h170sfde.pdf

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

 8.4. Size:303K  diodes
 dmn10h170sfg.pdf

DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

 8.5. Size:414K  diodes
 dmn10h170sk3.pdf

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

 8.6. Size:296K  diodes
 dmn10h220l.pdf

DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Fast Switching Speed Low Input/Output Leakage 220m @ VGS = 10V 1.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 1.3A 250m @ VGS = 4.5V Halogen and Antimony Fre

 8.7. Size:236K  diodes
 dmn10h120sfg.pdf

DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C density end products 110m @ VGS = 10V 3.8 A Occupies just 33% of the board area occupied by SO-8 enabling

 8.8. Size:364K  diodes
 dmn10h220lvt.pdf

DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = +25 C Fast Switching Speed 220m @ VGS = 10V 2.24A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V Halogen and Antimony Free. Green Device (Note 3) 2.10A 250m @ VGS =

 8.9. Size:467K  diodes
 dmn10h220le.pdf

DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance 2.3A 220m @ VGS = 10V Fast Switching Speed 100V 250m @ VGS = 4.5V 2.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen a

 8.10. Size:487K  diodes
 dmn10h170svt.pdf

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

 8.11. Size:265K  inchange semiconductor
 dmn10h100sk3.pdf

isc N-Channel MOSFET Transistor DMN10H100SK3 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p