DMN10H170SFG Todos los transistores

 

DMN10H170SFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN10H170SFG
   Código: G17
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 2.3 nS
   Cossⓘ - Capacitancia de salida: 40.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.122 Ohm
   Paquete / Cubierta: POWERDI3333
 

 Búsqueda de reemplazo de DMN10H170SFG MOSFET

   - Selección ⓘ de transistores por parámetros

 

DMN10H170SFG Datasheet (PDF)

 ..1. Size:303K  diodes
 dmn10h170sfg.pdf pdf_icon

DMN10H170SFG

DMN10H170SFGN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

 3.1. Size:401K  diodes
 dmn10h170sfde.pdf pdf_icon

DMN10H170SFG

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

 4.1. Size:414K  diodes
 dmn10h170sk3.pdf pdf_icon

DMN10H170SFG

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

 4.2. Size:487K  diodes
 dmn10h170svt.pdf pdf_icon

DMN10H170SFG

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

MOSTRAR MÁS

Otros transistores... DMN1033UCB4 , DMN1045UFR4 , DMN10H099SFG , DMN10H099SK3 , DMN10H100SK3 , DMN10H120SE , DMN10H120SFG , DMN10H170SFDE , NCEP15T14 , DMN10H170SK3 , DMN10H170SVT , DMN10H220L , DMN10H220LE , DMN10H220LVT , DMN1150UFB , DMN1260UFA , DMN13H750S .

 

 
Back to Top

 


 
.