DMN2022UFDF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN2022UFDF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 7.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 87 nS
   Cossⓘ - Capacitancia de salida: 98 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: U-DFN2020-6

Búsqueda de reemplazo de MOSFET DMN2022UFDF

DMN2022UFDF Datasheet (PDF)

..1. Size:307K diodes
dmn2022ufdf.pdf

DMN2022UFDF20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 22m @ VGS = 4.5V 7.9A Fast Switching Speed ESD Protected Gate 26m @ VGS = 2.5V 7.2A 20V Totally Lead-Free & Fully RoHS Comp

8.1. Size:275K diodes
dmn2028ufdh.pdf

DMN2028UFDHDUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V

8.2. Size:153K diodes
dmn2020lsn.pdf

DMN2020LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low

8.3. Size:652K diodes
dmn2027lk3.pdf

A Product Line ofDiodes IncorporatedDMN2027LK320V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS

8.4. Size:308K diodes
dmn2020ufcl.pdf

DMN2020UFCL20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall

8.5. Size:573K diodes
dmn2023ucb4.pdf

DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features IS Built-in G-S Protection Diode Against ESD 2kV HBM V(BR)DSS RSS(ON) Package TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24V 26m @ VGS = 4.5V X1-WLB1818-4 6.0A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High R

8.6. Size:265K diodes
dmn2029usd.pdf

DMN2029USD20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max Package TA = +25C Low On-Resistance25m @ VGS = 4.5V 5.8A Fast Switching Speed 20V SO-8 35m @ VGS = 2.5V 4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

8.7. Size:90K tysemi
dmn2020lsn.pdf

Product specificationDMN2020LSNN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: F

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMN2005LPK

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