DMN2065UW Todos los transistores

 ..1. Size:198K  diodes
 dmn2065uw.pdf

DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 56m @ VGS = 4.5V 2.8A Lead Free By Design/RoHS Compliant (Note 1) 65m @ VGS = 2.5V 2.6A "Green" Device (Note 2) 20V Qualified to AEC-Q101 standards for Hi

 9.1. Size:469K  diodes
 dmn2046u.pdf

DMN2046U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 72m @ VGS = 4.5V 3.4A Low Input/Output Leakage 20V 110m @ VGS = 2.5V 2.7A ESD protected gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal

 9.2. Size:398K  diodes
 dmn2041ufdb.pdf

DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 40m @ VGS = 4.5V 4.7A Low Profile, 0.6mm Max Height N-Channel 20V 3.7A 65m @ VGS = 2.5V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An

 9.3. Size:204K  diodes
 dmn2004vk.pdf

DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termin

 9.4. Size:275K  diodes
 dmn2028ufdh.pdf

DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V

 9.5. Size:297K  diodes
 dmn2016lhab.pdf

DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25 C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully

 9.6. Size:153K  diodes
 dmn2020lsn.pdf

DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low

 9.7. Size:652K  diodes
 dmn2027lk3.pdf

A Product Line of Diodes Incorporated DMN2027LK3 20V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS

 9.8. Size:308K  diodes
 dmn2020ufcl.pdf

DMN2020UFCL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall

 9.9. Size:189K  diodes
 dmn2004k.pdf

DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec

 9.10. Size:168K  diodes
 dmn2050l.pdf

DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 29m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 100m

 9.11. Size:162K  diodes
 dmn2005lpk.pdf

DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006-3 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections S

 9.12. Size:489K  diodes
 dmn2015ufde.pdf

DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Package TA = +25 C Low Gate Threshold Voltage Low On-Resistance 11.6m @ VGS = 4.5V 10.5A U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E

 9.13. Size:239K  diodes
 dmn2005k.pdf

DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020C Low Input/Output Leakage

 9.14. Size:151K  diodes
 dmn2040lts.pdf

DMN2040LTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case TSSOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-S

 9.15. Size:284K  diodes
 dmn2013ufde.pdf

DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) MAX Package TA = +25 C PCB footprint of 4mm2 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Complian

 9.16. Size:270K  diodes
 dmn2013ufx.pdf

DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 11.5m @ VGS = 4.5V 10 A Low Input/Output Leakage ESD Protected 20V 14m @ VGS = 2.5V 9 A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halog

 9.17. Size:182K  diodes
 dmn2041lsd.pdf

DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-0

 9.18. Size:168K  diodes
 dmn2016uts.pdf

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TSSOP-8L Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020

 9.19. Size:178K  diodes
 dmn2005dlp4k.pdf

DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed

 9.20. Size:284K  diodes
 dmn2004dmk.pdf

DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Term

 9.21. Size:231K  diodes
 dmn2050lfdb.pdf

DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free

 9.22. Size:145K  diodes
 dmn2009lss.pdf

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 8m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections See Diagram

 9.23. Size:334K  diodes
 dmn2005ufg.pdf

DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25 C (t

 9.24. Size:390K  diodes
 dmn2011ufx.pdf

 9.25. Size:327K  diodes
 dmn2056u.pdf

DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 9.26. Size:223K  diodes
 dmn2019uts.pdf

DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 18.5m @ VGS = 10V 5.4 A ESD Protected up to 2KV 21m @ VGS = 4.5V 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m @ VGS = 2.5V 4.6 A Halogen a

 9.27. Size:431K  diodes
 dmn2009uss.pdf

DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS

 9.28. Size:188K  diodes
 dmn2016lfg.pdf

DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m

 9.29. Size:278K  diodes
 dmn2004dwk.pdf

DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Ter

 9.30. Size:172K  diodes
 dmn2004wk.pdf

DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020D Fast Switching Speed Terminals Finish

 9.31. Size:184K  diodes
 dmn2004tk.pdf

DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Finish Matte T

 9.32. Size:197K  diodes
 dmn2075udw.pdf

DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Benefit and Features Low On-Resistance Low Input Capacitance ID V(BR)DSS RDS(on) max Fast Switching Speed TA = 25 C Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) 48m @ VGS = 4.5V 2.8A 20V "Green" Device (Note 2) 59m @ VGS = 2.5V 2.6A Qualified to AEC-Q101

 9.33. Size:262K  diodes
 dmn2014lhab.pdf

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Gate Threshold Voltage 13m @ VGS = 4.5V 9.0A Low Input Capacitance 14m @ VGS = 4.0V 8.7A Fast Switching Speed 20V 17m @ VGS = 3.1V 8.0A ESD Protected Gate 18m @ VGS = 2.5V 6.7A Totally Lead-Free & Full

 9.34. Size:573K  diodes
 dmn2023ucb4.pdf

DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features IS Built-in G-S Protection Diode Against ESD 2kV HBM V(BR)DSS RSS(ON) Package TA = +25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24V 26m @ VGS = 4.5V X1-WLB1818-4 6.0A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High R

 9.35. Size:334K  diodes
 dmn2011ufde.pdf

DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm Profile Ideal for Low Profile Applications V(BR)DSS RDS(ON) max TA = +25 C PCB Footprint of 4mm2 9.5m @ VGS = 4.5V 11.7A Low Gate Threshold Voltage 20V 11m @ VGS = 2.5V 10.8A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compl

 9.36. Size:153K  diodes
 dmn2040lsd.pdf

DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 26m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D

 9.37. Size:480K  diodes
 dmn2058u.pdf

DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an

 9.38. Size:166K  diodes
 dmn2005lp4k.pdf

DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Term

 9.39. Size:159K  diodes
 dmn2075u.pdf

DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Lo

 9.40. Size:157K  diodes
 dmn2041l.pdf

DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020

 9.41. Size:307K  diodes
 dmn2022ufdf.pdf

DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 22m @ VGS = 4.5V 7.9A Fast Switching Speed ESD Protected Gate 26m @ VGS = 2.5V 7.2A 20V Totally Lead-Free & Fully RoHS Comp

 9.42. Size:265K  diodes
 dmn2029usd.pdf

DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max Package TA = +25 C Low On-Resistance 25m @ VGS = 4.5V 5.8A Fast Switching Speed 20V SO-8 35m @ VGS = 2.5V 4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 9.43. Size:425K  diodes
 dmn2036ucb4.pdf

DMN2036UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM IS VSSS RSS(ON) Max Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) TA = +25 C Halogen and Antimony Free. Green Device (Note 3) 24V 36m @ VGS = 4.5V 5A Description and Applications Mechanical Data This

 9.44. Size:90K  tysemi
 dmn2020lsn.pdf

Product specification DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals F

 9.45. Size:152K  tysemi
 dmn2050l.pdf

Product specification DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 29m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 100m @VGS = 2.0V Terminal Connections

 9.46. Size:111K  tysemi
 dmn2075u.pdf

Product specification DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals

 9.47. Size:123K  tysemi
 dmn2041l.pdf

Product specification DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminal