SFI9614 Todos los transistores

 

SFI9614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFI9614
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO262
 

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SFI9614 Datasheet (PDF)

 ..1. Size:216K  samsung
 sfi9614.pdf pdf_icon

SFI9614

SFW/I9614Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 3.5 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 8.1. Size:254K  fairchild semi
 sfi9610 sfw9610.pdf pdf_icon

SFI9614

SFW/I9610Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 2.084 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maxi

 9.1. Size:259K  fairchild semi
 sfi9624 sfw9624.pdf pdf_icon

SFI9614

SFW/I9624Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 1.65 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.2. Size:256K  fairchild semi
 sfi9630 sfw9630.pdf pdf_icon

SFI9614

SFW/I9630Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.581 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

MOSTRAR MÁS

Otros transistores... SFH9154 , SFH9240 , SFH9244 , SFI2955 , SFI9510 , SFI9520 , SFI9530 , SFI9610 , IRLB4132 , SFI9620 , SFI9624 , SFI9630 , SFI9634 , SFI9640 , SFI9644 , SFI9Z14 , SFI9Z24 .

History: CS80N60P3 | SVT033R5NAT | CS830 | NTMS4917N

 

 
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