DMN2075UDW
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN2075UDW
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8
V
|Id|ⓘ - Corriente continua de drenaje: 2.8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8
nS
Cossⓘ - Capacitancia
de salida: 64.5
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048
Ohm
Paquete / Cubierta:
SOT-363
- Selección de transistores por parámetros
DMN2075UDW
Datasheet (PDF)
..1. Size:197K diodes
dmn2075udw.pdf 
DMN2075UDWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Benefit and Features Low On-Resistance Low Input Capacitance ID V(BR)DSS RDS(on) max Fast Switching Speed TA = 25C Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) 48m @ VGS = 4.5V 2.8A 20V "Green" Device (Note 2) 59m @ VGS = 2.5V 2.6A Qualified to AEC-Q101
6.1. Size:159K diodes
dmn2075u.pdf
DMN2075UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Lo
6.2. Size:111K tysemi
dmn2075u.pdf
Product specificationDMN2075UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals:
9.1. Size:469K diodes
dmn2046u.pdf
DMN2046U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 72m @ VGS = 4.5V 3.4A Low Input/Output Leakage 20V 110m @ VGS = 2.5V 2.7A ESD protected gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
9.2. Size:398K diodes
dmn2041ufdb.pdf
DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 40m @ VGS = 4.5V 4.7A Low Profile, 0.6mm Max Height N-Channel 20V 3.7A 65m @ VGS = 2.5V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An
9.3. Size:204K diodes
dmn2004vk.pdf
DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin
9.4. Size:275K diodes
dmn2028ufdh.pdf
DMN2028UFDHDUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V
9.5. Size:297K diodes
dmn2016lhab.pdf
DMN2016LHABDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully
9.6. Size:153K diodes
dmn2020lsn.pdf
DMN2020LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low
9.7. Size:652K diodes
dmn2027lk3.pdf
A Product Line ofDiodes IncorporatedDMN2027LK320V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS
9.8. Size:308K diodes
dmn2020ufcl.pdf
DMN2020UFCL20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall
9.9. Size:189K diodes
dmn2004k.pdf
DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec
9.10. Size:168K diodes
dmn2050l.pdf
DMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m
9.11. Size:162K diodes
dmn2005lpk.pdf
DMN2005LPKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: S
9.12. Size:489K diodes
dmn2015ufde.pdf
DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Package TA = +25C Low Gate Threshold Voltage Low On-Resistance 11.6m @ VGS = 4.5V 10.5A U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E
9.13. Size:239K diodes
dmn2005k.pdf
DMN2005KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakage
9.14. Size:151K diodes
dmn2040lts.pdf
DMN2040LTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: TSSOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-S
9.15. Size:284K diodes
dmn2013ufde.pdf
DMN2013UFDE20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) MAX PackageTA = +25C PCB footprint of 4mm2 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate20V Totally Lead-Free & Fully RoHS Complian
9.16. Size:270K diodes
dmn2013ufx.pdf
DMN2013UFXDual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 11.5m @ VGS = 4.5V 10 A Low Input/Output Leakage ESD Protected 20V 14m @ VGS = 2.5V 9 A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halog
9.17. Size:182K diodes
dmn2041lsd.pdf
DMN2041LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-0
9.18. Size:168K diodes
dmn2016uts.pdf
DMN2016UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020
9.19. Size:178K diodes
dmn2005dlp4k.pdf
DMN2005DLP4KDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed
9.20. Size:284K diodes
dmn2004dmk.pdf
DMN2004DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Term
9.21. Size:231K diodes
dmn2050lfdb.pdf
DMN2050LFDBDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free
9.22. Size:145K diodes
dmn2009lss.pdf
DMN2009LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 8m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections: See Diagram
9.23. Size:334K diodes
dmn2005ufg.pdf
DMN2005UFG20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25C (t
9.24. Size:390K diodes
dmn2011ufx.pdf
DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 9.5m @ VGS = 4.5V 12.2 A Fast Switching Speed 20V 10.4 A 13m @ VGS = 2.5V Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
9.25. Size:327K diodes
dmn2056u.pdf
DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
9.26. Size:223K diodes
dmn2019uts.pdf
DMN2019UTS20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 18.5m @ VGS = 10V 5.4 A ESD Protected up to 2KV 21m @ VGS = 4.5V 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m @ VGS = 2.5V 4.6 A Halogen a
9.27. Size:431K diodes
dmn2009uss.pdf
DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS
9.28. Size:188K diodes
dmn2016lfg.pdf
DMN2016LFGDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m
9.29. Size:278K diodes
dmn2004dwk.pdf
DMN2004DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter
9.30. Size:172K diodes
dmn2004wk.pdf
DMN2004WKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish
9.31. Size:184K diodes
dmn2004tk.pdf
DMN2004TKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte T
9.32. Size:262K diodes
dmn2014lhab.pdf
DMN2014LHABDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Gate Threshold Voltage 13m @ VGS = 4.5V 9.0A Low Input Capacitance 14m @ VGS = 4.0V 8.7A Fast Switching Speed 20V 17m @ VGS = 3.1V 8.0A ESD Protected Gate 18m @ VGS = 2.5V 6.7A Totally Lead-Free & Full
9.33. Size:573K diodes
dmn2023ucb4.pdf
DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features IS Built-in G-S Protection Diode Against ESD 2kV HBM V(BR)DSS RSS(ON) Package TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24V 26m @ VGS = 4.5V X1-WLB1818-4 6.0A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High R
9.34. Size:334K diodes
dmn2011ufde.pdf
DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm Profile Ideal for Low Profile Applications V(BR)DSS RDS(ON) max TA = +25C PCB Footprint of 4mm2 9.5m @ VGS = 4.5V 11.7A Low Gate Threshold Voltage 20V 11m @ VGS = 2.5V 10.8A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compl
9.35. Size:153K diodes
dmn2040lsd.pdf
DMN2040LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 26m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D
9.36. Size:480K diodes
dmn2058u.pdf
DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an
9.37. Size:166K diodes
dmn2005lp4k.pdf
DMN2005LP4KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Term
9.38. Size:157K diodes
dmn2041l.pdf
DMN2041LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020
9.39. Size:307K diodes
dmn2022ufdf.pdf
DMN2022UFDF20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 22m @ VGS = 4.5V 7.9A Fast Switching Speed ESD Protected Gate 26m @ VGS = 2.5V 7.2A 20V Totally Lead-Free & Fully RoHS Comp
9.40. Size:265K diodes
dmn2029usd.pdf
DMN2029USD20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max Package TA = +25C Low On-Resistance25m @ VGS = 4.5V 5.8A Fast Switching Speed 20V SO-8 35m @ VGS = 2.5V 4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
9.41. Size:425K diodes
dmn2036ucb4.pdf
DMN2036UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM IS VSSS RSS(ON) Max Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) TA = +25C Halogen and Antimony Free. Green Device (Note 3) 24V 36m @ VGS = 4.5V 5A Description and Applications Mechanical Data This
9.42. Size:198K diodes
dmn2065uw.pdf
DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 56m @ VGS = 4.5V 2.8A Lead Free By Design/RoHS Compliant (Note 1) 65m @ VGS = 2.5V 2.6A "Green" Device (Note 2) 20V Qualified to AEC-Q101 standards for Hi
9.43. Size:90K tysemi
dmn2020lsn.pdf
Product specificationDMN2020LSNN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: F
9.44. Size:152K tysemi
dmn2050l.pdf
Product specificationDMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m @VGS = 2.0V Terminal Connections
9.45. Size:123K tysemi
dmn2041l.pdf
Product specificationDMN2041LN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal
Otros transistores... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: G11
| AUIRF7734M2
| CEF05N6
| AM2336N-T1
| DMP1096UCB4
| SMOS44N80
