DMN2170U-7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN2170U-7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET DMN2170U-7

DMN2170U-7 Datasheet (PDF)

..1. Size:128K diodes
dmn2170u-7.pdf

DMN2170UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 70m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-

6.1. Size:150K diodes
dmn2170u.pdf

9.1. Size:120K diodes
dmn2104l-7.pdf

DMN2104LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 53m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 104m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gat

9.2. Size:111K diodes
dmn2100udm.pdf

DMN2100UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 55 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-

9.3. Size:214K diodes
dmn21d2ufb.pdf

DMN21D2UFB20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Very low Gate Threshold Voltage, 1.0V max ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 0.99 @ VGS = 4.5V 760mA Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height

9.4. Size:215K diodes
dmn2112sn.pdf

DMN2112SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, "Green" Molding Compound. Cards, and Battery Powered Circuits UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 2) Moisture Sen

9.5. Size:149K diodes
dmn2114sn.pdf

DMN2114SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, Green Molding Cards, and Battery Power Circuits Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 2) Moistu

9.6. Size:124K diodes
dmn2104l.pdf

9.7. Size:53K tysemi
dmn2112sn.pdf

Product specificationDMN2112SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, "Green" Molding Compound. Cards, and Battery Powered Circuits UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Not

9.8. Size:52K tysemi
dmn2114sn.pdf

Product specificationDMN2114SNN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC59 Ideal for Notebook Computer, Portable Phone, PCMCIA Case Material - Molded Plastic, Green Molding Cards, and Battery Power Circuits Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (N

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: