DMN2400UFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect

DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage

DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma