DMN3025LSS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3025LSS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.4 nS

Cossⓘ - Capacitancia de salida: 66 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO-8

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DMN3025LSS datasheet

 ..1. Size:293K  diodes
 dmn3025lss.pdf pdf_icon

DMN3025LSS

DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON)max TA = +25 C Fast Switching Speed 20m @ VGS = 10V 7.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qu

 6.1. Size:284K  diodes
 dmn3025lfg.pdf pdf_icon

DMN3025LSS

DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID Max V(BR)DSS RDS(ON) Max Small form factor thermally efficient package enables higher TA = +25 C density end products Occupies just 33% of the board area occupied by SO-8 enabling 18m @ VGS = 10V 7.5A smaller end prod

 8.1. Size:290K  diodes
 dmn3026lvt.pdf pdf_icon

DMN3025LSS

DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 23m @ VGS = 10V 6.6A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qual

 8.2. Size:157K  diodes
 dmn3024sfg.pdf pdf_icon

DMN3025LSS

DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

MOSTRAR MÁS

Otros transistores... DMN3016LK3, DMN3016LPS, DMN3016LSS, DMN3018SFG, DMN3018SSD, DMN3018SSS-13, DMN3024SFG, DMN3025LFG, K4145, DMN3026LVT, DMN3029LFG, DMN3030LFG, DMN3032LE, DMN3033LSNQ, DMN3035LWN, DMN3042L, DMN3050S-7