DMN3026LVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN3026LVT30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 23m @ VGS = 10V 6.6A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qual

DMN3024SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

DMN3025LSSN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max Low Input Capacitance V(BR)DSS RDS(ON)max TA = +25C Fast Switching Speed 20m @ VGS = 10V 7.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qu

DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage Low Input Capacitance 6.2A 25m @ VGS = 10V Fast Switching Speed 30V 28m @ VGS = 4.5V 5.8A Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Complian

A Product Line ofDiodes IncorporatedDMN3024LK330V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

DMN3029LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) Small form factor thermally efficient package enables higher TA = 25C density end products 18.6m @ VGS = 10V 8.0A Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end pr

A Product Line ofDiodes IncorporatedDMN3024LSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

A Product Line ofDiodes IncorporatedDMN3020LK330V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS compliant 20m @ VGS= 10V 16.7A 30V 34m @ VGS= 4.5V 12.6A Mechanical Da

DMN3025LFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID Max V(BR)DSS RDS(ON) Max Small form factor thermally efficient package enables higher TA = +25C density end products Occupies just 33% of the board area occupied by SO-8 enabling 18m @ VGS = 10V 7.5A smaller end prod

A Product Line ofDiodes IncorporatedDMN3024LSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

isc N-Channel MOSFET Transistor DMN3024LK3FEATURESDrain Current I = 14.4A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu