DMN3026LVT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3026LVT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TSOT-26

 Búsqueda de reemplazo de DMN3026LVT MOSFET

- Selecciónⓘ de transistores por parámetros

 

DMN3026LVT datasheet

 ..1. Size:290K  diodes
 dmn3026lvt.pdf pdf_icon

DMN3026LVT

DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 23m @ VGS = 10V 6.6A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qual

 8.1. Size:157K  diodes
 dmn3024sfg.pdf pdf_icon

DMN3026LVT

DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

 8.2. Size:293K  diodes
 dmn3025lss.pdf pdf_icon

DMN3026LVT

DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON)max TA = +25 C Fast Switching Speed 20m @ VGS = 10V 7.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qu

 8.3. Size:546K  diodes
 dmn3023l.pdf pdf_icon

DMN3026LVT

DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 6.2A 25m @ VGS = 10V Fast Switching Speed 30V 28m @ VGS = 4.5V 5.8A Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Complian

MOSTRAR MÁS

Otros transistores... DMN3016LPS, DMN3016LSS, DMN3018SFG, DMN3018SSD, DMN3018SSS-13, DMN3024SFG, DMN3025LFG, DMN3025LSS, 13N50, DMN3029LFG, DMN3030LFG, DMN3032LE, DMN3033LSNQ, DMN3035LWN, DMN3042L, DMN3050S-7, DMN3053L