DMN3030LFG Todos los transistores

 

DMN3030LFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN3030LFG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.6 nS
   Cossⓘ - Capacitancia de salida: 121 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: POWERDI-3333-8
 

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DMN3030LFG Datasheet (PDF)

 ..1. Size:272K  diodes
dmn3030lfg.pdf pdf_icon

DMN3030LFG

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

 6.1. Size:177K  diodes
dmn3030lss.pdf pdf_icon

DMN3030LFG

DMN3030LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

 8.1. Size:153K  diodes
dmn3033lsd.pdf pdf_icon

DMN3030LFG

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

 8.2. Size:321K  diodes
dmn3032le.pdf pdf_icon

DMN3030LFG

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

Otros transistores... DMN3018SFG , DMN3018SSD , DMN3018SSS-13 , DMN3024SFG , DMN3025LFG , DMN3025LSS , DMN3026LVT , DMN3029LFG , 4N60 , DMN3032LE , DMN3033LSNQ , DMN3035LWN , DMN3042L , DMN3050S-7 , DMN3053L , DMN3065LW , DMN3067LW .

History: VBZE30N06

 

 
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