DMN30H4D0LFDE Todos los transistores

 

DMN30H4D0LFDE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN30H4D0LFDE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.7 nS
   Cossⓘ - Capacitancia de salida: 11.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: U-DFN2020-6
 

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DMN30H4D0LFDE Datasheet (PDF)

 ..1. Size:386K  diodes
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DMN30H4D0LFDE

DMN30H4D0LFDEN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) TA = +25C PCB footprint of 4mm2 4 @ VGS = 10V 0.55A Low Gate Threshold Voltage 300V 4 @ VGS = 4.5V 0.55A Low Input Capacitance 6 @ VGS = 2.7V 0.44A Fast Switching Speed Totally Lead-Free & Fu

 4.1. Size:373K  diodes
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DMN30H4D0LFDE

DMN30H4D0L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Threshold Voltage V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 4 @ VGS = 10V 0.25A 300V Small Surface Mount Package 4 @ VGS = 4.5V 0.25A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 8.1. Size:334K  diodes
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DMN30H4D0LFDE

DMN30H14DLYN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 14 @ VGS = 10V 0.21A 300V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20 @ VGS = 4.5V 0.17A Halogen and Antimony Free. Green Device (Note 3) Qualified t

 9.1. Size:544K  1
dmn3009lfvw-7.pdf pdf_icon

DMN30H4D0LFDE

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

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History: IXTA36N30P | BUK9275-100A | AP93T03AGH

 

 
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