DMN4010LFG Todos los transistores

 ..1. Size:220K  diodes
 dmn4010lfg.pdf

DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling

 6.1. Size:287K  diodes
 dmn4010lk3.pdf

DMN4010LK3 Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi

 6.2. Size:266K  inchange semiconductor
 dmn4010lk3.pdf

isc N-Channel MOSFET Transistor DMN4010LK3 FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 8.1. Size:664K  diodes
 dmn4015lk3.pdf

A Product Line of Diodes Incorporated DMN4015LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech