DMN4026SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN4026SK3
   Código: N4026S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 9.6 nC
   trⓘ - Tiempo de subida: 4.6 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET DMN4026SK3

DMN4026SK3 Datasheet (PDF)

..1. Size:464K diodes
dmn4026sk3.pdf

DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5

..2. Size:266K inchange semiconductor
dmn4026sk3.pdf

isc N-Channel MOSFET Transistor DMN4026SK3FEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:308K diodes
dmn4026ssd.pdf

DMN4026SSD40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 24m @VGS = 10V 9.0A Fast Switching Speed 40V 32m @VGS = 4.5V 7.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

8.1. Size:676K diodes
dmn4027sss.pdf

A Product Line ofDiodes IncorporatedDMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 6.1A Mechanic

8.2. Size:286K diodes
dmn4020lfde.pdf

DMN4020LFDE40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low On-Resistance 20m@ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim

8.3. Size:695K diodes
dmn4027ssd.pdf

A Product Line ofDiodes IncorporatedDMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 5.4A Mec

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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