DMN6070SSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN6070SSD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.1 nS

Cossⓘ - Capacitancia de salida: 26.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SO-8

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DMN6070SSD datasheet

 ..1. Size:230K  diodes
 dmn6070ssd.pdf pdf_icon

DMN6070SSD

DMN6070SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3

 ..2. Size:1549K  cn vbsemi
 dmn6070ssd.pdf pdf_icon

DMN6070SSD

DMN6070SSD www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann

 6.1. Size:278K  diodes
 dmn6070sfcl.pdf pdf_icon

DMN6070SSD

DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C

 6.2. Size:495K  diodes
 dmn6070sy.pdf pdf_icon

DMN6070SSD

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me

MOSTRAR MÁS

Otros transistores... DMN6013LFG, DMN6040SFDE, DMN6040SK3, DMN6040SSD, DMN6040SSS, DMN6040SVT, DMN6069SE, DMN6070SFCL, AOD4184A, DMN6075S, DMN6140L, DMN6140LQ, DMN62D0LFB, DMN62D0LFD, DMN62D0SFD, DMN62D1LFD, DMN63D8LDW