DMN62D0LFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN62D0LFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.1 nS

Cossⓘ - Capacitancia de salida: 4.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: X1-DFN1212-3

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DMN62D0LFD datasheet

 ..1. Size:323K  diodes
 dmn62d0lfd.pdf pdf_icon

DMN62D0LFD

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

 5.1. Size:270K  diodes
 dmn62d0lfb.pdf pdf_icon

DMN62D0LFD

DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

 7.1. Size:456K  diodes
 dmn62d0u.pdf pdf_icon

DMN62D0LFD

DMN62D0U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance BVDSS RDS(ON) max TA = +25 C Low Input Capacitance 2 @ VGS = 4.5V 380mA 60V Fast Switching Speed 340mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Desc

 7.2. Size:216K  diodes
 dmn62d0sfd.pdf pdf_icon

DMN62D0LFD

DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed ESD Protected Gate to 2kV 2 @ VGS = 10V 540mA Lead Free/RoHS Compliant (Note 1) 60V Green Device (Note 2) Qualified to AEC-Q101 Standard

MOSTRAR MÁS

Otros transistores... DMN6040SVT, DMN6069SE, DMN6070SFCL, DMN6070SSD, DMN6075S, DMN6140L, DMN6140LQ, DMN62D0LFB, IRF730, DMN62D0SFD, DMN62D1LFD, DMN63D8LDW, DMN63D8LV, DMN65D8L, DMN65D8LDW, DMN65D8LFB, DMN65D8LW