DMP2100UCB9 Todos los transistores

 

DMP2100UCB9 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMP2100UCB9
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 107 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: U-WLB1515-9
 

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DMP2100UCB9 Datasheet (PDF)

 ..1. Size:422K  diodes
dmp2100ucb9.pdf pdf_icon

DMP2100UCB9

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

 6.1. Size:193K  diodes
dmp2100u.pdf pdf_icon

DMP2100UCB9

DMP2100UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

 8.1. Size:400K  diodes
dmp210dufb4.pdf pdf_icon

DMP2100UCB9

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

 8.2. Size:440K  diodes
dmp210dudj.pdf pdf_icon

DMP2100UCB9

DMP210DUDJDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections: See Diagra

Otros transistores... DMP2038USS , DMP2039UFDE , DMP2047UCB4 , DMP2060UFDB , DMP2066LVT , DMP2066UFDE , DMP2070UCB6 , DMP2100U , IRF9540N , DMP213DUFA , DMP2160UFDBQ , DMP21D0UFD , DMP21D0UT , DMP21D2UFA , DMP21D5UFB4 , DMP21D5UFD , DMP2200UDW .

History: PMPB48EP | BRCS070N03DP | 2SK1524 | 2N7002TC | CJQ9435 | IPA041N04NG

 

 
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