DMP3017SFK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP3017SFK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 10.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16.4 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: U-DFN2523-6
Búsqueda de reemplazo de DMP3017SFK MOSFET
DMP3017SFK Datasheet (PDF)
dmp3017sfk.pdf

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmp3017sfv-7.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V
dmp3017sfgq.pdf

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab
dmp3017sfg.pdf

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli
Otros transistores... DMP2540UCB9 , DMP25H18DLFDE , DMP26M7UFG , DMP3008SFG , DMP3010LK3 , DMP3010LPSQ , DMP3012LPS , DMP3017SFG , STP80NF70 , DMP3018SFK , DMP3028LFDE , DMP3028LK3 , DMP3028LSD , DMP3035SFG , DMP3036SFG , DMP3036SSD , DMP3036SSS .
History: NCE85H21C | HTD2K4P15T | NTJS4405NT1 | SHD225628
History: NCE85H21C | HTD2K4P15T | NTJS4405NT1 | SHD225628



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