SFP9510 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFP9510

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO220

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SFP9510 datasheet

 ..1. Size:497K  samsung
 sfp9510.pdf pdf_icon

SFP9510

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current -10 A (Max.) @ VDS = -100V Low RDS(ON) 0.912 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R

 9.1. Size:229K  fairchild semi
 sfp9520.pdf pdf_icon

SFP9510

SFP9520 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6 A n Improved Gate Charge n 175oC Opereting Temperature TO-220 n Extended Safe Operating Area n Lower Leakage Current -10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.444 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source

 9.2. Size:232K  fairchild semi
 sfp9530.pdf pdf_icon

SFP9510

SFP9530 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -10.5 A n Improved Gate Charge n 175oC Opereting Temperature TO-220 n Extended Safe Operating Area n Lower Leakage Current -10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.225 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sou

 9.3. Size:495K  samsung
 sfp9520.pdf pdf_icon

SFP9510

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current -10 A (Max.) @ VDS = -100V Low RDS(ON) 0.444 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rat

MOSTRAR MÁS

Otros transistores... SFI9Z24, SFI9Z34, SFM9014, SFM9110, SFM9120, SFM9210, SFM9214, SFP2955, AO3407, SFP9520, SFP9530, SFP9540, SFP9610, SFP9614, SFP9620, SFP9624, SFP9630