DMP3036SSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP3036SSS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 226 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
DMP3036SSS Datasheet (PDF)
dmp3036sss.pdf

DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -19.5A -30V Fast Switching Speed -16.2A 29m @ VGS = -5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.
dmp3036ssd.pdf

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
dmp3036sfg.pdf

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab
dmp3036sfv.pdf

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TDM3432 | SML802R4BN | 4N60L-TM3-T | DMN4010LFG | SFF340 | CS1N60A4H | VBA3410
History: TDM3432 | SML802R4BN | 4N60L-TM3-T | DMN4010LFG | SFF340 | CS1N60A4H | VBA3410



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