DMP3050LSS Todos los transistores

 

DMP3050LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMP3050LSS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.9 nS
   Cossⓘ - Capacitancia de salida: 83 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

DMP3050LSS Datasheet (PDF)

 ..1. Size:227K  diodes
dmp3050lss.pdf pdf_icon

DMP3050LSS

DMP3050LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 45m @ VGS = -10V -4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 80m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 6.1. Size:176K  diodes
dmp3050lvt.pdf pdf_icon

DMP3050LSS

DMP3050LVTP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 90m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 8.1. Size:546K  diodes
dmp3056l.pdf pdf_icon

DMP3050LSS

DMP3056L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 50m @ VGS =-10V -4.3A -30V Fast Switching Speed 70m @ VGS =-4.5V -3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

 8.2. Size:131K  diodes
dmp3056ldm.pdf pdf_icon

DMP3050LSS

DMP3056LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON): Case: SOT-26 45m @VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 65m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - Matte Tin anneale

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS-G

 

 
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