DMP3099L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP3099L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.08 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET DMP3099L

DMP3099L Datasheet (PDF)

..1. Size:229K diodes
dmp3099l.pdf

DMP3099LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 65m @ VGS = -10V -3.8A -30V Low Input/Output Leakage 99m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony

8.1. Size:200K diodes
dmp3098lss.pdf

DMP3098LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 65m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity: Leve

8.2. Size:277K diodes
dmp3098lq.pdf

DMP3098LQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceIDV(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25C 70m@ VGS = -10V -3.8A Low Input Capacitance -30V 120m@ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

8.3. Size:159K diodes
dmp3098lsd.pdf

DMP3098LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D

8.4. Size:229K diodes
dmp3098ldm.pdf

DMP3098LDMP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

8.5. Size:100K diodes
dmp3098l.pdf

DMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-2370m @ VGS = -10V, ID = -3.8A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Fi

8.6. Size:83K tysemi
dmp3098l.pdf

Product specificationDMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) maxTA = 25C Low Input Capacitance Fast Switching Speed 70m@ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m@ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

8.7. Size:280K cn shikues
dmp3098l.pdf

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m(MAX) @VGS = -10V.10V. RDS(ON) = 70m(MAX) @VGS = -4.5V.4.5V. RDS(ON) =120m(MAX) @VGS = -2.5V.2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM3305D

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