DMP4015SPS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP4015SPS
   Código: P4015SP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 47.5 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1036 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: POWERDI5060-8

Búsqueda de reemplazo de MOSFET DMP4015SPS

DMP4015SPS Datasheet (PDF)

..1. Size:202K diodes
dmp4015sps.pdf

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -17.0A " Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for Hig

0.1. Size:359K 1
dmp4015sps-13.pdf

DMP4015SPSGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 11m @ VGS = -10V -17A -40V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 15m @ VGS = -4.5V -14.5A Halogen and

0.2. Size:363K diodes
dmp4015spsq.pdf

DMP4015SPSQGreen40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -17.0A Halogen and Antimony Free. Green Device

6.1. Size:270K diodes
dmp4015sssq.pdf

DMP4015SSSQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m @ VGS = -10V -10.1A Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to

6.2. Size:224K diodes
dmp4015sk3.pdf

DMP4015SK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low on-resistance TA = 25C Fast switching speed 11m @ VGS = -10V -14.0A Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 15m

6.3. Size:314K diodes
dmp4015sk3q.pdf

Green DMP4015SK3QP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(on) max TC = +25C Low on-resistance 11m @ VGS = -10V -35A Fast switching speed -40V 15m @ VGS = -4.5V -30A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

6.4. Size:189K diodes
dmp4015sss.pdf

DMP4015SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) 11m @ VGS = -10V -10.1A -40V Qualified to AEC-Q101 Standards for High Rel

6.5. Size:1482K cn vbsemi
dmp4015sssq.pdf

DMP4015SSSQwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

6.6. Size:266K inchange semiconductor
dmp4015sk3.pdf

isc P-Channel MOSFET Transistor DMP4015SK3FEATURESDrain Current I = -35A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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