DMP6110SSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP6110SSS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 49.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET DMP6110SSS

DMP6110SSS Datasheet (PDF)

..1. Size:276K diodes
dmp6110sss.pdf

DMP6110SSS60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 110m @ VGS = -10V -4.5A -60V Fast Switching Speed 130m @ VGS = -4.5V -4.2A Low Input/ Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes

5.1. Size:377K diodes
dmp6110ssd.pdf

DMP6110SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 105m @ VGS = -10V -3.3 A Fast Switching Speed -60V 130m @ VGS = -4.5V -3.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

6.1. Size:327K diodes
dmp6110svt.pdf

DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TC = +25C Fast Switching Speed 105m @ VGS = -10V -7.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -60V 130m @ VGS = -4.5V -6.

9.1. Size:288K diodes
dmp6185se.pdf

DMP6185SE60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green

9.2. Size:308K diodes
dmp6185sk3.pdf

DMP6185SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TC = +25C Fast switching speed 150m @ VGS = -10V -9.4A -60V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 185m @ VGS = -4.5V -8.5A Halogen and Antimony Free. Green

9.3. Size:527K diodes
dmp6185seq.pdf

DMP6185SEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production BVDSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green D

9.4. Size:188K diodes
dmp6180sk3.pdf

DMP6180SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

9.5. Size:430K diodes
dmp610dl.pdf

DMP610DL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A-60V 10 @ V = -5V -180mA Low Input Capacitance GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

9.6. Size:435K diodes
dmp6180sk3q.pdf

DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

9.7. Size:254K inchange semiconductor
dmp6180sk3-13.pdf

isc P-Channel MOSFET Transistor DMP6180SK3-13FEATURESStatic drain-source on-resistance:RDS(on)110m(@V = -10V; I = -12A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Management FunctionsDC / DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)

9.8. Size:266K inchange semiconductor
dmp6180sk3.pdf

isc P-Channel MOSFET Transistor DMP6180SK3FEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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