DMP6185SK3 Todos los transistores

 ..1. Size:308K  diodes
 dmp6185sk3.pdf

 6.1. Size:288K  diodes
 dmp6185se.pdf

DMP6185SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) TA = +25 C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green

 6.2. Size:527K  diodes
 dmp6185seq.pdf

DMP6185SEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production BVDSS RDS(on) TA = +25 C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green D

 8.1. Size:188K  diodes
 dmp6180sk3.pdf

DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

 8.2. Size:435K  diodes
 dmp6180sk3q.pdf

DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25 C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

 8.3. Size:254K  inchange semiconductor
 dmp6180sk3-13.pdf

isc P-Channel MOSFET Transistor DMP6180SK3-13 FEATURES Static drain-source on-resistance RDS(on) 110m (@V = -10V; I = -12A) GS D Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Management Functions DC / DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.4. Size:266K  inchange semiconductor
 dmp6180sk3.pdf

isc P-Channel MOSFET Transistor DMP6180SK3 FEATURES Drain Current I = -14A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R =110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu