DMS3019SSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMS3019SSD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.19 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.22 nS
Cossⓘ - Capacitancia de salida: 154 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de DMS3019SSD MOSFET
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DMS3019SSD datasheet
dms3019ssd.pdf
DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. UL Low RDS(on) minimizes conduction loss Flammability Classification Rating 94V-0
fdms3016dc.pdf
July 2013 FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS
dms3016sss.pdf
DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3012sfg.pdf
DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver TA = +25 C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo
Otros transistores... DMS2085LSD , DMS2095LFDB , DMS3012SFG , DMS3014SFG , DMS3014SSS , DMS3015SSS , DMS3016SSS , DMS3017SSD , IRFP250N , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , DMT6016LSS , DMT8012LFG .
History: SVS20N60KD2 | APT10026L2LL | FDB045AN08A0-F085
History: SVS20N60KD2 | APT10026L2LL | FDB045AN08A0-F085
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