DMT6008LFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMT6008LFG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.4 nS
   Cossⓘ - Capacitancia de salida: 822 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: POWERDI3333-8

Búsqueda de reemplazo de MOSFET DMT6008LFG

DMT6008LFG Datasheet (PDF)

..1. Size:265K diodes
dmt6008lfg.pdf

DMT6008LFGN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) Ensures on State Losses Are Minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS (ON) Product (FOM) TC = +25C Advanced Technology for DC/DC Converts 7.5m @ VGS = 10V 60A 60V Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS

8.1. Size:638K 1
dmt6009lps-13.pdf

GreenDMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 87A 10m @ VGS = 10V Low RDS(ON) Minimizes Power Losses 60V 79A 12m @ VGS = 4.5V Low QG Minimizes Switching Losses Lead-Free Fin

8.2. Size:487K 1
dmt6005lps-13.pdf

DMT6005LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID 100% Unclamped Inductive Switching ensures more reliable and BVDSS RDS(ON) Max TC = +25C robust end application (Note 9) Low RDS(ON) Minimizes Power Losses 4.5m @ VGS = 10V 100A 60V Low QG Minimizes Switching Losses 6.5m @ VGS = 4.5V 100A Lead

8.3. Size:378K 1
dmt6004lps-13.pdf

DMT6004LPS Green60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID MAX 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 100A 3.1m @ VGS = 10V Low QG Minimizes Switching Losses 60V Lead-Free Finish; RoHS Comp

8.4. Size:432K diodes
dmt6009lfg.pdf

DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 10m @ VGS = 10V 34A 60V Small Form Factor Thermally Efficient Package Enables Higher 1

8.5. Size:585K diodes
dmt6009lct.pdf

DMT6009LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Excellent QGD X RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts 12m @VGS = 10V 37.2A Low Input/Output Leakage 60V 14.5m @VGS = 4.5V 33.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gree

8.6. Size:412K diodes
dmt6005lct.pdf

GreenDMT6005LCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 6m @ VGS = 10V 100A Low Input Capacitance 60V 10m @ VGS = 4.5V 85A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halo

8.7. Size:638K diodes
dmt6009lps.pdf

8.8. Size:287K diodes
dmt6004sct.pdf

DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application ID Low Input Capacitance BVDSS RDS(ON) max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Fre

8.9. Size:378K diodes
dmt6004lps.pdf

8.10. Size:474K diodes
dmt6009lss.pdf

DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID max BVDSS RDS(ON) max TA = +25C High Conversion Efficiency Low RDS(ON) Ensures On State Losses Are Minimized 9.5m @ VGS = 10V 10.8A 60V Excellent Qgd x RDS(ON) Product (FOM) 12m @ VGS = 4.5V 9.6

8.11. Size:487K diodes
dmt6005lps.pdf

8.12. Size:261K inchange semiconductor
dmt6009lct.pdf

isc N-Channel MOSFET Transistor DMT6009LCTFEATURESDrain Current I = 37.2A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

8.13. Size:261K inchange semiconductor
dmt6005lct.pdf

isc N-Channel MOSFET Transistor DMT6005LCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

8.14. Size:261K inchange semiconductor
dmt6004sct.pdf

isc N-Channel MOSFET Transistor DMT6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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