SFP9624 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFP9624
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 38 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 2.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 65 pF
Resistencia entre drenaje y fuente RDS(on): 2.4 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SFP9624
SFP9624 Datasheet (PDF)
sfp9624.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
sfp9620.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 1.111 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
sfp9640l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SFP9640LAdvanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitancesID = -11 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : -10uA (Max.) @ VDS= -200V Lower RDS(ON) : 0.383 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim
sfp9614.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1. 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 3.5 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
sfp9634.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
sfp9644.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
sfp9640.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
sfp9630.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
sfp9610.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 2.084 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
Otros transistores... SFP2955 , SFP9510 , SFP9520 , SFP9530 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , 4N60 , SFP9630 , SFP9634 , SFP9640 , SFP9644 , SFP9Z14 , SFP9Z24 , SFP9Z34 , SFR2955 .