DSKTJ04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DSKTJ04
Código: 8S_8T_8U
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.002 A
Tjⓘ - Temperatura máxima de unión: 80 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1500 Ohm
Paquete / Cubierta: TSSSMINI3-F2-B
Búsqueda de reemplazo de MOSFET DSKTJ04
DSKTJ04 Datasheet (PDF)
dsktj04.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ04Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV and high speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain
dsktj05.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ05Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
dsktj08.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ08Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
dsktj07.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ07Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source Emb
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