DSKTJ05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DSKTJ05
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.002 A
Tjⓘ - Temperatura máxima de unión: 80 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1500 Ohm
Encapsulados: TSSSMINI3-F2-B
Búsqueda de reemplazo de DSKTJ05 MOSFET
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DSKTJ05 datasheet
dsktj05.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ05 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source
dsktj08.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ08 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source
dsktj07.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ07 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package Low noise voltage NV Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source Emb
Otros transistores... DN3535 , DN3545 , DN3765 , DSK3J02 , DSK5J01 , DSK5J01X0L , DSK9J01 , DSKTJ04 , STP80NF70 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E .
History: CRTD055N03L
History: CRTD055N03L
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Recientemente añadidas las descripciónes de los transistores:
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