IPD031N06L3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD031N06L3 datasheet

..1. Size:445K infineon
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..2. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6

6.1. Size:668K infineon
ipd031n03l.pdf pdf_icon

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6.2. Size:671K infineon
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