IPD033N06N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD033N06N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 107 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 670 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de IPD033N06N MOSFET
- Selecciónⓘ de transistores por parámetros
IPD033N06N datasheet
..1. Size:865K infineon
ipd033n06n.pdf 
IPD033N06N MOSFET D-PAK OptiMOSTM Power-Transistor, 60 V Features Optimized for synchronous rectification tab 100% avalanche tested Superior thermal resistance N-channel, normal level 1 2 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Table 1 Key Performance Paramete
..2. Size:242K inchange semiconductor
ipd033n06n.pdf
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
9.1. Size:423K infineon
ipd038n04n.pdf
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9.2. Size:400K infineon
ipd03n03lag.pdf
IPD03N03LA G IPS03N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD Version) 3.2 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C operating temperatu
9.3. Size:433K infineon
ipd034n06n3g.pdf
pe # ! ! (TM) # A03 B53 4 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC 1 D Q H35
9.4. Size:668K infineon
ipd031n03l.pdf
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9.5. Size:436K infineon
ipd034n06n3.pdf
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9.7. Size:429K infineon
ipd036n04l.pdf
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9.8. Size:153K infineon
ipd036n04lg.pdf
Type IPD036N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.6 m DS(on),max Optimized technology for DC/DC converters I 90 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 100% Av
9.9. Size:445K infineon
ipd031n06l3.pdf
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9.10. Size:444K infineon
ipd035n06l3.pdf
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9.11. Size:671K infineon
ipd031n03lg ips031n03lg.pdf
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9.12. Size:2552K cn vbsemi
ipd036n04lg.pdf
IPD036N04LG www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM
9.13. Size:243K inchange semiconductor
ipd038n06n3.pdf
isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.14. Size:241K inchange semiconductor
ipd031n03l.pdf
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V
9.15. Size:243K inchange semiconductor
ipd034n06n3.pdf
isc N-Channel MOSFET Transistor IPD034N06N3 IIPD034N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag
9.16. Size:242K inchange semiconductor
ipd036n04l.pdf
isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04L FEATURES Static drain-source on-resistance RDS(on) 3.6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V
9.17. Size:242K inchange semiconductor
ipd031n06l3.pdf
isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6
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History: PSMN4R2-60PL
