IPD033N06N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD033N06NMOSFETD-PAKOptiMOSTM Power-Transistor, 60 VFeatures Optimized for synchronous rectificationtab 100% avalanche tested Superior thermal resistance N-channel, normal level1 2 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Table 1 Key Performance Paramete

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06NFEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

pe $ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D P 1BC BF9C389>7 &( , - 6?A ,&), m D n) m xP ( @C9=9I54 C538>?E5AC5ABD1)P * D17 C? $ 6?A C1A75C 1@@BP ' 381>>5?A=1

IPD03N03LA G IPS03N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD Version) 3.2mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operating temperatu

pe # ! ! (TM) #:A03 B53 4 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 1 DQ H35

pe % # ! %' # ! % (>.;?6?@%>EFeaturesV D R !3DE DH;E5:;@9 (* .! / 8AC .(+.R 1m D n) m xR * BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDI D1)R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@DR ) 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I R BCA6F5E !* ( D n)R 07CJ >AH A@ C7D;DE3@57 RD n)R G3>3@5:7 C3E76R +4 8C77 B>3E;@9 - A#. 5A?B>;3@ER #

pe # ! ! (TM) #:A03 B53 4 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 1 DQ H35

Type # ! ! #:A0 4A9E5B 1>4 43 43 ,&),B1=@

pe % # ! % (>.;?6?@%>EFeaturesV 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*-R m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCI D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* (

TypeIPD036N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.6mDS(on),max Optimized technology for DC/DC convertersI 90 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 100% Av

pe % # ! % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 1 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD 1 DR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?DTy

pe % # ! % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDDR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?DType #* (

pe % # ! %' # ! % (>.;?6?@%>EFeaturesV D R !3DE DH;E5:;@9 (* .! / 8AC .(+.R 1m D n) m xR * BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDI D1)R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@DR ) 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I R BCA6F5E !* ( D n)R 07CJ >AH A@ C7D;DE3@57 RD n)R G3>3@5:7 C3E76R +4 8C77 B>3E;@9 - A#. 5A?B>;3@ER #

IPD036N04LGwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03LFEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV

isc N-Channel MOSFET Transistor IPD034N06N3IIPD034N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04LFEATURESStatic drain-source on-resistance:RDS(on)3.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV

isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6