IPD053N08N3 Todos los transistores

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 ipd053n08n3.pdf

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 ipd053n08n3.pdf

isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80

 0.1. Size:345K  infineon
 ipd053n08n3g.pdf

IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 80 V N-channel, normal level RDS(on),max 5.3 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Very low on-resistance R DS(on) 175 C operating temperature previous engineering Pb-free lead plating; RoHS compliant sample code IPD06CN08N Qualified according to JEDEC1

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 ipd053n06n.pdf

Type IPD053N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 5.3 mW Superior thermal resistance ID 45 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

 6.2. Size:615K  infineon
 ipd053n06n3.pdf

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 6.3. Size:242K  inchange semiconductor
 ipd053n06n.pdf

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou