IPD068N10N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD068N10N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 646 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: TO-252

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IPD068N10N3 Datasheet (PDF)

..1. Size:243K inchange semiconductor
ipd068n10n3.pdf

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3FEATURESStatic drain-source on-resistance:RDS(on)6.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

0.1. Size:501K infineon
ipd068n10n3g.pdf

IPD068N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 6.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

8.1. Size:678K infineon
ipd068p03l3g 20.pdf

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8.2. Size:557K infineon
ipd068p03l3g.pdf

IPD068P03L3 GOptiMOSTM P3 Power-TransistorProduct Summary FeaturesVDS -30 V single P-Channel in DPAKRDS(on),max VGS = 10V 6.8 mW Qualified according JEDEC1) for target applicationsVGS = 4.5V 11.0 175 C operating temperatureID ID -70 A 100% Avalanche tested Pb-free; RoHS compliant, halogen free applications: power managementPG-TO252-3

8.3. Size:247K inchange semiconductor
ipd068p03l3.pdf

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3FEATURESStatic drain-source on-resistance:RDS(on)6.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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