IPD068N10N3 Todos los transistores

 ..1. Size:243K  inchange semiconductor
 ipd068n10n3.pdf

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 0.1. Size:501K  infineon
 ipd068n10n3g.pdf

IPD068N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 6.8 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

 8.1. Size:678K  infineon
 ipd068p03l3g 20.pdf

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 8.2. Size:557K  infineon
 ipd068p03l3g.pdf

IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS -30 V single P-Channel in DPAK RDS(on),max VGS = 10V 6.8 mW Qualified according JEDEC1) for target applications VGS = 4.5V 11.0 175 C operating temperature ID ID -70 A 100% Avalanche tested Pb-free; RoHS compliant, halogen free applications power management PG-TO252-3

 8.3. Size:247K  inchange semiconductor
 ipd068p03l3.pdf

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 C operating junction temperature ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour