IPD220N06L3 Todos los transistores

 ..1. Size:448K  infineon
 ipd220n06l3 ipd220n06l3g.pdf

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 ..2. Size:242K  inchange semiconductor
 ipd220n06l3.pdf

isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

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 ipd22n08s2l-50.pdf

IPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R 50 m DS(on),max Automotive AEC Q101 qualified I 25 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD22N08S2L