IPD25CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD25CN10N
Código: 25CN10N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 71 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 35 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 232 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD25CN10N
IPD25CN10N Datasheet (PDF)
ipd25cn10n.pdf
isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10NFEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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pe # ! ! #:A03 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1
ipd25dp06lm.pdf
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ipd25dp06nm.pdf
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ipd25n06s4l-30.pdf
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ipd25n06s2-40.pdf
IPD25N06S2-40OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 40mDS(on),max Automotive AEC Q101 qualifiedI 29 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD25N06S2
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IRFR3411TR
