IPD60R180C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD60R180C7MOSFETDPAK600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technology eve

isc N-Channel MOSFET Transistor IPD60R180C7IIPD60R180C7FEATURESStatic drain-source on-resistance:RDS(on)0.18Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

IPD60R180P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

IPD60R180P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

isc N-Channel MOSFET Transistor IPD60R180P7SIIPD60R180P7SFEATURESStatic drain-source on-resistance:RDS(on)0.18Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V