IPD60R280CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD60R280CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

isc N-Channel MOSFET Transistor IPD60R280CFD7IIPD60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved MOSFET reverse diode dv/dt and diF/dt ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

IPD60R280P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

IPD60R280PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

IPD60R280P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

isc N-Channel MOSFET Transistor IPD60R280P7SIIPD60R280P7SFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

isc N-Channel MOSFET Transistor IPD60R280P7IIPD60R280P7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for a wide variety of applications and power rangesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER