IPD60R280P7S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD60R280P7S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 14 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO-252
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IPD60R280P7S datasheet
ipd60r280p7s.pdf
IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipd60r280p7s.pdf
isc N-Channel MOSFET Transistor IPD60R280P7S IIPD60R280P7S FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain
ipd60r280p7.pdf
IPD60R280P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
ipd60r280p7.pdf
isc N-Channel MOSFET Transistor IPD60R280P7 IIPD60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for a wide variety of applications and power ranges ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Otros transistores... IPD400N06N , IPD530N15N3 , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IRF740 , IPD60R360P7 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE .
History: 2SJ529 | TPC8003
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