IPD60R360P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD60R360P7S
Código: 60S360P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 41 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 10 pF
Resistencia entre drenaje y fuente RDS(on): 0.36 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD60R360P7S
IPD60R360P7S Datasheet (PDF)
ipd60r360p7s.pdf
IPD60R360P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF
ipd60r360p7s.pdf
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7SFEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
ipd60r360p7.pdf
IPD60R360P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE
ipd60r360p7.pdf
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7FEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
ipd60r360cfd7.pdf
IPD60R360CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
