IPD65R1K5CE Todos los transistores

 ..1. Size:940K  infineon
 ipd65r1k5ce.pdf

IPD65R1K5CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 ..2. Size:242K  inchange semiconductor
 ipd65r1k5ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE FEATURES Static drain-source on-resistance RDS(on) 1.5 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 6.1. Size:963K  infineon
 ipd65r1k0ce.pdf

IPD65R1K0CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 6.2. Size:1133K  infineon
 ipd65r1k4cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD Data Sheet Rev. 2.0 Rev. 2.1, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjuncti

 6.3. Size:1724K  infineon
 ipd65r1k4c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R1K4C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

 6.4. Size:242K  inchange semiconductor
 ipd65r1k0ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE FEATURES Static drain-source on-resistance RDS(on) 1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 6.5. Size:242K  inchange semiconductor
 ipd65r1k4cfd.pdf

isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFD FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 6.6. Size:242K  inchange semiconductor
 ipd65r1k4c6.pdf

isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT