IPD65R1K5CE Todos los transistores

 

IPD65R1K5CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R1K5CE
   Código: 65S1K5CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 10.5 nC
   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

IPD65R1K5CE Datasheet (PDF)

 ..1. Size:940K  infineon
 ipd65r1k5ce.pdf pdf_icon

IPD65R1K5CE

IPD65R1K5CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 ..2. Size:242K  inchange semiconductor
 ipd65r1k5ce.pdf pdf_icon

IPD65R1K5CE

isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 6.1. Size:963K  infineon
 ipd65r1k0ce.pdf pdf_icon

IPD65R1K5CE

IPD65R1K0CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.2. Size:1133K  infineon
 ipd65r1k4cfd.pdf pdf_icon

IPD65R1K5CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDData SheetRev. 2.0Rev. 2.1, 2013-07-31FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjuncti

MOSTRAR MÁS

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