SFR9024 Todos los transistores

 

SFR9024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFR9024
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET SFR9024

 

SFR9024 Datasheet (PDF)

 ..1. Size:230K  fairchild semi
sfu9024 sfr9024.pdf

SFR9024
SFR9024

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 ..2. Size:214K  samsung
sfr9024.pdf

SFR9024
SFR9024

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 0.1. Size:228K  fairchild semi
sfr9024tm.pdf

SFR9024
SFR9024

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 9.1. Size:238K  fairchild semi
sfu9034 sfr9034.pdf

SFR9024
SFR9024

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

 9.2. Size:235K  fairchild semi
sfr9034tf.pdf

SFR9024
SFR9024

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

 9.3. Size:229K  fairchild semi
sfu9014 sfr9014.pdf

SFR9024
SFR9024

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 9.4. Size:226K  fairchild semi
sfr9014tf.pdf

SFR9024
SFR9024

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 9.5. Size:504K  samsung
sfr9034.pdf

SFR9024
SFR9024

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.6. Size:495K  samsung
sfr9014.pdf

SFR9024
SFR9024

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Otros transistores... SFP9634 , SFP9640 , SFP9644 , SFP9Z14 , SFP9Z24 , SFP9Z34 , SFR2955 , SFR9014 , SPW47N60C3 , SFR9034 , SFR9110 , SFR9120 , SFR9130 , SFR9210 , SFR9214 , SFR9220 , SFR9224 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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