IPP60R080P7 Todos los transistores

 

IPP60R080P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP60R080P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 129 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de IPP60R080P7 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPP60R080P7 datasheet

 ..1. Size:1746K  infineon
ipp60r080p7.pdf pdf_icon

IPP60R080P7

IPP60R080P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 ..2. Size:245K  inchange semiconductor
ipp60r080p7.pdf pdf_icon

IPP60R080P7

isc N-Channel MOSFET Transistor IPP60R080P7 IIPP60R080P7 FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA

 7.1. Size:1890K  infineon
ipp60r040c7.pdf pdf_icon

IPP60R080P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R040C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.2. Size:1879K  infineon
ipp60r099c7.pdf pdf_icon

IPP60R080P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R099C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

Otros transistores... IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 , IPP530N15N3 , IPP600N25N3 , IPP60R060C7 , 5N65 , IPP60R099P7 , IPP60R120C7 , IPP60R170CFD7 , IPP60R180P7 , IPP60R280CFD7 , IPP60R280P7 , IPP60R600P7 , IPW60R120P7 .

History: SW4N65K | SWF10N65D | AP01L60J-HF | AP01N40H-HF | EMB12N04V | 4N60G-TN3-R | AP01L60H-HF

 

 

 

 

↑ Back to Top
.