IPP60R600P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP60R600P7
Código: 60R600P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 9 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 7 pF
Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
Paquete / Cubierta: TO-220
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IPP60R600P7 Datasheet (PDF)
ipp60r600p7.pdf
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ipp60r600p7.pdf
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ipp60r600p6.pdf
isc N-Channel MOSFET Transistor IPP60R600P6IIPP60R600P6FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use
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