IPW60R120P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPW60R120P7
   Código: 60R120P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET IPW60R120P7

IPW60R120P7 Datasheet (PDF)

..1. Size:1335K infineon
ipw60r120p7.pdf

IPW60R120P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

..2. Size:242K inchange semiconductor
ipw60r120p7.pdf

isc N-Channel MOSFET Transistor IPW60R120P7IIPW60R120P7FEATURESStatic drain-source on-resistance:RDS(on)120mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

5.1. Size:1359K infineon
ipw60r120c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R120C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

5.2. Size:243K inchange semiconductor
ipw60r120c7.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R120C7IIPW60R120C7FEATURESStatic drain-source on-resistance:RDS(on)120mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

6.1. Size:1329K infineon
ipw60r125cfd7.pdf

IPW60R125CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

6.2. Size:2729K infineon
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

6.3. Size:1257K infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

6.4. Size:2788K infineon
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf

6.5. Size:672K infineon
ipw60r125cp.pdf

IPW60R125CPCIMOS #:A0:9 688DG9>CC6CIPGTO247 1 ::7!"% # 4= =;0.4,77C /0=4290/ 1:I8

6.6. Size:242K inchange semiconductor
ipw60r125p6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125P6IIPW60R125P6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

6.7. Size:242K inchange semiconductor
ipw60r125c6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R125C6IIPW60R125C6FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

6.8. Size:242K inchange semiconductor
ipw60r125cp.pdf

isc N-Channel MOSFET Transistor IPW60R125CPIIPW60R125CPFEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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