SFR9110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFR9110

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO252

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SFR9110 datasheet

 ..1. Size:253K  fairchild semi
 sfu9110 sfr9110.pdf pdf_icon

SFR9110

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M

 ..2. Size:427K  samsung
 sfr9110.pdf pdf_icon

SFR9110

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 0.1. Size:250K  fairchild semi
 sfr9110tf.pdf pdf_icon

SFR9110

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M

 9.1. Size:262K  fairchild semi
 sfu9130 sfr9130.pdf pdf_icon

SFR9110

SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

MOSTRAR MÁS

Otros transistores... SFP9644, SFP9Z14, SFP9Z24, SFP9Z34, SFR2955, SFR9014, SFR9024, SFR9034, IRLB3034, SFR9120, SFR9130, SFR9210, SFR9214, SFR9220, SFR9224, SFS2955, SFS9510