IRFB4510 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB4510
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 62 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de IRFB4510 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFB4510 datasheet
irfb4510pbf.pdf
PD - 97772 IRFB4510PbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 10.7m l Uninterruptible Power Supply l High Speed Power Switching G max. 13.5m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 62A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characte
irfb4510.pdf
isc N-Channel MOSFET Transistor IRFB4510 IIRFB4510 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
irfb4215pbf.pdf
PD - 95757A IRFB4215PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced
irfb4310gpbf.pdf
PD - 96190 IRFB4310GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf
PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,
irfb4321gpbf.pdf
PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery
auirfb4410.pdf
PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf
PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
irfb42n20d.pdf
PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Vo
irfb4137pbf.pdf
IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara
irfb4310zgpbf.pdf
PD - 96189 IRFB4310ZGPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn
irfb4115gpbf.pdf
PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l
irfb4115pbf.pdf
IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf
PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala
irfb4227pbf.pdf
PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 17
irfb4710.pdf
PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262
irfb4229pbf.pdf
PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG f
irfb4127pbf.pdf
PD -97136A IRFB4127PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 17m l High Speed Power Switching G max. 20m l Hard Switched and High Frequency Circuits ID 76A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala
irfb42n20dpbf.pdf
PD- 95470 SMPS MOSFET IRFB42N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.055 44A l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char
irfb4321pbf.pdf
PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re
irfb4212pbf.pdf
PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 100 V amplifier applications m RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiency Qg typ. 15 nC Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Low QRR for better THD and lower EMI TJ max 175 C
irfb4410.pdf
PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita
irfb4233pbf.pdf
PD - 97004A IRFB4233PbF PDP SWITCH Features Key Parameters l Advanced process technology VDS min 230 V l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 276 V l Low EPULSE rating to reduce power dissipation m RDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and Pass IRP max @ TC= 100 C 114 A Switch Applications
irfb4020pbf.pdf
PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC Low QG and QSW for better THD and improved RG(int) typ. 3.2 efficiency TJ max 175 C Low QRR for better THD and lower EM
irfb4615pbf.pdf
PD -96171 IRFB4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 32m l High Speed Power Switching G max. 39m l Hard Switched and High Frequency Circuits ID 35A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche
irfb4332pbf.pdf
PD - 97099 IRFB4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 120 A and Pass Switch Applications
irfb4215.pdf
PD - 95884 IRFB4215 HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn
irfb4620pbf.pdf
PD -96172 IRFB4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 60m l Uninterruptible Power Supply l High Speed Power Switching G max. 72.5m l Hard Switched and High Frequency Circuits ID 25A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche
irfb4710pbf irfs4710pbf irfsl4710pbf.pdf
PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf
PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
irfb4110gpbf.pdf
PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l
irfb4110pbf.pdf
IRFB4110PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.7m l High Speed Power Switching max. 4.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 180A S ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness
irfb4610 irfs4610 irfsl4610.pdf
PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita
irfb4410zgpbf.pdf
PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized C
irfb4228pbf.pdf
PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 170 A and Pass Switch Application
irfb4110qpbf.pdf
PD - 96138 IRFB4110QPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits l Lead-Free max 4.5m ID 180A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness D l Fully Characterized Capacitance an
irfb4410 irfs4410 irfsl4410.pdf
PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri
auirfb4610 auirfs4610.pdf
AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
irfb4110.pdf
IRFB4110 100 V N-Channel MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l
irfb4110.pdf
100V N-Channel Power MOSFET DESCRIPTION The IRFB4110 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R
irfb4227.pdf
IRFB4227 Silicon N-Channel Power MOSFET Description The IRFB4227 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =200V,I =65A DS D R 20m @V =10V (Typ 20m ) dson GS R 25m @V =4.5V (Typ 25m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Sin
irfb4115g.pdf
isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU
irfb4410zg.pdf
isc N-Channel MOSFET Transistor IRFB4410ZG IIRFB4410ZG FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )
irfb4610.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4610 IIRFB4610 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
irfb4110.pdf
isc N-Channel MOSFET Transistor IRFB4110 IIRFB4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfb42n20d.pdf
isc N-Channel MOSFET Transistor IRFB42N20D IIRFB42N20D FEATURES Static drain-source on-resistance RDS(on) 55m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters Uninterruptible Power Supplies ABSOLUTE MAXIMUM RATINGS(T =2
irfb4019.pdf
isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS
irfb4228.pdf
isc N-Channel MOSFET Transistor IRFB4228 IIRFB4228 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM
irfb41n15d.pdf
isc N-Channel MOSFET Transistor IRFB41N15D IIRFB41N15D FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfb4615.pdf
isc N-Channel MOSFET Transistor IRFB4615 IIRFB4615 FEATURES Static drain-source on-resistance RDS(on) 39m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfb4310.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310 IIRFB4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU
irfb4137.pdf
isc N-Channel MOSFET Transistor IRFB4137 IIRFB4137 FEATURES Static drain-source on-resistance RDS(on) 69m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfb4127.pdf
isc N-Channel MOSFET Transistor IRFB4127 IIRFB4127 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfb4620.pdf
isc N-Channel MOSFET Transistor IRFB4620 IIRFB4620 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU
irfb4332.pdf
isc N-Channel MOSFET Transistor IRFB4332 IIRFB4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM
irfb4710.pdf
isc N-Channel MOSFET Transistor IRFB4710 IIRFB4710 FEATURES Static drain-source on-resistance RDS(on) 0.014 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
irfb4310z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI
irfb4321pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
irfb4227.pdf
isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227 FEATURES Static drain-source on-resistance RDS(on) 24m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM
irfb4410.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410 IIRFB4410 FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU
irfb4321.pdf
isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfb4410z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410Z IIRFB4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM
irfb4229.pdf
isc N-Channel MOSFET Transistor IRFB4229 IIRFB4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM
irfb4212.pdf
isc N-Channel MOSFET Transistor IRFB4212 IIRFB4212 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
irfb4110g.pdf
isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110G FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
irfb4310zpbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
irfb4115.pdf
isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfb4020.pdf
isc N-Channel MOSFET Transistor IRFB4020 IIRFB4020 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATING
Otros transistores... IPP60R600P7 , IPW60R120P7 , IRF135B203 , IRF250P224 , IRF3256 , IRFB3407Z , IRFB4137 , IRFB4228 , IRF1407 , IRFI4510G , IRLML2502TRPBF , IRFL3713 , IRFP4137 , IRFP7530 , IRFR420TR , IRFR4510 , IRFR7440 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor