IRFP4137 Todos los transistores

 ..1. Size:383K  international rectifier
 irfp4137pbf.pdf

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 ..2. Size:242K  inchange semiconductor
 irfp4137.pdf

isc N-Channel MOSFET Transistor IRFP4137 IIRFP4137 FEATURES Static drain-source on-resistance RDS(on) 69m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V

 8.1. Size:511K  international rectifier
 irfp4127pbf.pdf

IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 8.2. Size:288K  international rectifier
 irfp4110pbf.pdf

PD - 97311 IRFP4110PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

 8.3. Size:519K  infineon
 auirfp4110.pdf

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V D Ultra Low On-Resistance RDS(on) typ. 3.7m Enhanced dV/dT and dI/dT capability 4.5m max 175 C Operating Temperature G ID (Silicon Limited) 180A Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID (Package Lim

 8.4. Size:728K  cn evvo
 irfp4110.pdf

IRFP4110 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics Drain-Sourtce Breakdown Voltage VGS=0V,ID=250 A 100 --- --- V BVDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 A IDSS Gate-Source Leakage Current IGSS VGS= 20V, VDS=0A --- --- 100 nA On Chara

 8.5. Size:243K  inchange semiconductor
 irfp4110.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110 IIRFP4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

 8.6. Size:242K  inchange semiconductor
 irfp4127.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4127 IIRFP4127 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power