IRFR7546 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR7546
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 56
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28
nS
Cossⓘ - Capacitancia
de salida: 280
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079
Ohm
Paquete / Cubierta:
TO-252
Búsqueda de reemplazo de IRFR7546 MOSFET
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Selección ⓘ de transistores por parámetros
Principales características: IRFR7546
..1. Size:576K international rectifier
irfr7546pbf irfu7546pbf.pdf 
StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9m G Synchronous rectifier applications ID (Silicon Limited) 71A Resonant
..2. Size:242K inchange semiconductor
irfr7546.pdf 
isc N-Channel MOSFET Transistor IRFR7546, IIRFR7546 FEATURES Static drain-source on-resistance RDS(on) 7.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
7.1. Size:581K international rectifier
irfr7540pbf irfu7540pbf.pdf 
StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0m Battery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant
7.2. Size:242K inchange semiconductor
irfr7540.pdf 
isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.1. Size:576K international rectifier
irfr7740pbf irfu7740pbf.pdf 
StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O
9.2. Size:272K international rectifier
irfr7446pbf.pdf 
StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l PWM Inverterized topologies D VDSS 40V l Battery powered circuits RDS(on) typ. 3.0m l Half-bridge and full-bridge topologies max. 3.9m l Synchronous rectifier applications G l Resonant mode power supplies ID (Silicon Limited) 120A l OR-ing
9.3. Size:292K international rectifier
irfr7440pbf irfu7440pbf.pdf 
StrongIRFET IRFR7440PbF IRFU7440PbF HEXFET Power MOSFET Applications D VDSS 40V l Brushed Motor drive applications l BLDC Motor drive applications RDS(on) typ. 1.9m l PWM Inverterized topologies max. 2.4m l Battery powered circuits G ID (Silicon Limited) 180A l Half-bridge and full-bridge topologies l Electronic ballast applications ID (Package Limited) 90A S l Sy
9.4. Size:574K international rectifier
irfr7746pbf irfu7746pbf.pdf 
StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 75V D BLDC Motor drive applications RDS(on) typ. 9.5m Battery powered circuits max 11.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 59A S Resona
9.5. Size:242K inchange semiconductor
irfr7446.pdf 
isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.6. Size:242K inchange semiconductor
irfr7740.pdf 
isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.7. Size:241K inchange semiconductor
irfr7746.pdf 
isc N-Channel MOSFET Transistor IRFR7746, IIRFR7746 FEATURES Static drain-source on-resistance RDS(on) 11.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
9.8. Size:242K inchange semiconductor
irfr7440.pdf 
isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
Otros transistores... IRFL3713
, IRFP4137
, IRFP7530
, IRFR420TR
, IRFR4510
, IRFR7440
, IRFR7446
, IRFR7540
, STF13NM60N
, IRFR7740
, IRFR7746
, IRFR812
, IRFR825TR
, IRFR8314
, IRFS3307ZTRL
, IRFS7534TRLPBF
, ISTP16NF06
.
History: BF410B
| IRFR825TR