IRFR8314 Todos los transistores

 

IRFR8314 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR8314
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 908 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: TO-252
 

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IRFR8314 Datasheet (PDF)

 ..1. Size:543K  international rectifier
irfr8314pbf.pdf pdf_icon

IRFR8314

IRFR8314PbF HEXFET Power MOSFET Application VDSS 30 V DOptimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2(@ VGS = 10V) mG(@ VGS = 4.5V) 3.1 SQg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co

 ..2. Size:242K  inchange semiconductor
irfr8314.pdf pdf_icon

IRFR8314

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314FEATURESStatic drain-source on-resistance:RDS(on)2.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for UPS/Inverter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.1. Size:453K  international rectifier
auirfr8401 auirfu8401.pdf pdf_icon

IRFR8314

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 9.2. Size:279K  international rectifier
auirfr8403 auirfu8403.pdf pdf_icon

IRFR8314

AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L

Otros transistores... IRFR7440 , IRFR7446 , IRFR7540 , IRFR7546 , IRFR7740 , IRFR7746 , IRFR812 , IRFR825TR , IRF520 , IRFS3307ZTRL , IRFS7534TRLPBF , ISTP16NF06 , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL .

 

 
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